- We will send in 10–14 business days.
/images/books/13297682/9783709119334.jpg)
- Author: Viktor Sverdlov
- Publisher: Springer
- Year: 2016
- Pages: 252
- ISBN-10: 3709119332
- ISBN-13: 9783709119334
- Format: 17 x 24.4 x 1.4 cm, softcover
- Language: English
- SAVE -10% with code: EXTRA
Reviews
Description
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
EXTRA 10 % discount with code: EXTRA
The promotion ends in 20d.09:02:34
The discount code is valid when purchasing from 10 €. Discounts do not stack.
- Author: Viktor Sverdlov
- Publisher: Springer
- Year: 2016
- Pages: 252
- ISBN-10: 3709119332
- ISBN-13: 9783709119334
- Format: 17 x 24.4 x 1.4 cm, softcover
- Language: English English
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Reviews