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- Author: John D Cressler
- Publisher: Artech House Publishers
- Year: 2002
- Pages: 588
- ISBN-10: 1580533612
- ISBN-13: 9781580533614
- Format: 16 x 23.7 x 4.1 cm, kieti viršeliai
- Language: English
- SAVE -10% with code: EXTRA
Silicon-Germanium Heterojunction Bipolar Transistors (e-book) (used book) | bookbook.eu
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Description
This resource provides engineers with a comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a semi-conductor technology that is expected to revolutionise the communications industry by offering low-cost, high-speed solutions for emerging communications needs. It offers practitioners and students a from-the-ground-up understanding of SiGe HBT devices and technology from a very broad perspective. The text covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe. This reference explains how to design, simulate, fabricate and measure a SiGe HBT, and offers an understanding of the optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this new technology.
EXTRA 10 % discount with code: EXTRA
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- Author: John D Cressler
- Publisher: Artech House Publishers
- Year: 2002
- Pages: 588
- ISBN-10: 1580533612
- ISBN-13: 9781580533614
- Format: 16 x 23.7 x 4.1 cm, kieti viršeliai
- Language: English English
This resource provides engineers with a comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a semi-conductor technology that is expected to revolutionise the communications industry by offering low-cost, high-speed solutions for emerging communications needs. It offers practitioners and students a from-the-ground-up understanding of SiGe HBT devices and technology from a very broad perspective. The text covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe. This reference explains how to design, simulate, fabricate and measure a SiGe HBT, and offers an understanding of the optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this new technology.
Reviews