267,29 €
296,99 €
-10% with code: EXTRA
Sic Power Module Design
Sic Power Module Design
267,29
296,99 €
  • We will send in 10–14 business days.
High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in…
  • SAVE -10% with code: EXTRA

Sic Power Module Design (e-book) (used book) | bookbook.eu

Reviews

Description

High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging.

This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs.

Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.

EXTRA 10 % discount with code: EXTRA

267,29
296,99 €
We will send in 10–14 business days.

The promotion ends in 19d.21:58:52

The discount code is valid when purchasing from 10 €. Discounts do not stack.

Log in and for this item
you will receive 2,97 Book Euros!?

High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging.

This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs.

Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.

Reviews

  • No reviews
0 customers have rated this item.
5
0%
4
0%
3
0%
2
0%
1
0%
(will not be displayed)