- We will send in 10–14 business days.
/images/books/5471303/9781077888210.jpg)
- Author: Gabriel Alfonso Rincón-Mora
- Publisher: INDEPENDENTLY PUBLISHED
- ISBN-10: 107788821X
- ISBN-13: 9781077888210
- Format: 15.2 x 22.9 x 0.5 cm, softcover
- Language: English
- SAVE -10% with code: EXTRA
MOSFETs (e-book) (used book) | Gabriel Alfonso Rincón-Mora | bookbook.eu
Reviews
Description
This 62-page handbook uses insight to explain how metal-oxide-semiconductor (MOS) field-effect transistors (FETs) block and conduct current in sub-threshold, weak inversion, and inversion. It describes how MOSFETs accumulate, deplete, and invert their channels and how they saturate their currents in sub-threshold and inversion. It also discusses body effect, how gate-channel oxide capacitance distributes across operating regions, and short-channel effects, like drain-induced barrier lowering (DIBL), surface scattering, hot-electron injection, oxide-surface ejections, velocity saturation, and impact ionization and avalanche. Discussions extend to varactors, MOS diodes, lightly doped drains (LDD), diffused-channel MOSFETs (DMOS), junction isolation, substrate MOSFETs, welled MOSFETs, and electronic and systemic noise coupling and injection. Illustrative figures, equations, and examples complement discussions throughout.
The promotion ends in 
- Author: Gabriel Alfonso Rincón-Mora
- Publisher: INDEPENDENTLY PUBLISHED
- ISBN-10: 107788821X
- ISBN-13: 9781077888210
- Format: 15.2 x 22.9 x 0.5 cm, softcover
- Language: English English
This 62-page handbook uses insight to explain how metal-oxide-semiconductor (MOS) field-effect transistors (FETs) block and conduct current in sub-threshold, weak inversion, and inversion. It describes how MOSFETs accumulate, deplete, and invert their channels and how they saturate their currents in sub-threshold and inversion. It also discusses body effect, how gate-channel oxide capacitance distributes across operating regions, and short-channel effects, like drain-induced barrier lowering (DIBL), surface scattering, hot-electron injection, oxide-surface ejections, velocity saturation, and impact ionization and avalanche. Discussions extend to varactors, MOS diodes, lightly doped drains (LDD), diffused-channel MOSFETs (DMOS), junction isolation, substrate MOSFETs, welled MOSFETs, and electronic and systemic noise coupling and injection. Illustrative figures, equations, and examples complement discussions throughout.
Reviews