335,33 €
372,59 €
-10% with code: EXTRA
Intelligent Integrated Systems
Intelligent Integrated Systems
335,33
372,59 €
  • We will send in 10–14 business days.
A state-of-the-art overview by internationally recognized researchers, this book reviews the architectures of breakthrough devices required for future intelligent integrated systems. It highlights advanced ailicon-based CMOS technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. It illustrates how to augment silicon technologies by the c…
  • Publisher:
  • Year: 2014
  • Pages: 499
  • ISBN-10: 9814411426
  • ISBN-13: 9789814411424
  • Format: 16 x 23.1 x 3.3 cm, hardcover
  • Language: English
  • SAVE -10% with code: EXTRA

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A state-of-the-art overview by internationally recognized researchers, this book reviews the architectures of breakthrough devices required for future intelligent integrated systems. It highlights advanced ailicon-based CMOS technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. It illustrates how to augment silicon technologies by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.

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  • Publisher:
  • Year: 2014
  • Pages: 499
  • ISBN-10: 9814411426
  • ISBN-13: 9789814411424
  • Format: 16 x 23.1 x 3.3 cm, hardcover
  • Language: English English

A state-of-the-art overview by internationally recognized researchers, this book reviews the architectures of breakthrough devices required for future intelligent integrated systems. It highlights advanced ailicon-based CMOS technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. It illustrates how to augment silicon technologies by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.

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