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- Author: Chia-Ling Hsu
- Publisher: VDM Verlag
- ISBN-10: 3639114507
- ISBN-13: 9783639114508
- Format: 15.2 x 22.9 x 0.7 cm, softcover
- Language: English
- SAVE -10% with code: EXTRA
Fabrication and Characterization of ZnO Nanowire Transistors - Vertically Aligned ZnO Nanowire Arrays, Multiple Channel Nanowire-based Transistors (e-book) (used book) | bookbook.eu
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Recently, a variety of physical and chemical methods have been used to synthesize and obtain 1- dimensional semiconductor nanostructures. For the cause of easier nanostructure formation and device applications, we begin this study with the investigation in growth mechanism and well- controlled condition to synthesize 1-dimensional ZnO nanowires. For the low dimensional structure of nanowire, the manipulation of individual nanowire has become an unsettled and crucial issue. Therefore, we use a printing method to realize the nanowire alignment in broad classes. In addition, our investigators would explore the correlation between the quality of 1- dimensional material and electronic transport properties of ZnO nanowire-based transistors. In the fabrication of nanowire transistors, the existing common method of dielectrophoresis (DEP) process would impose a contact problem, and an additional or subsequent metallization is necessary for the electronic connection. Therefore, we will develop a novel method to simultaneously obtain aligned nanowire arrays and device pattering by combining DEP and imprinting processes.
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- Author: Chia-Ling Hsu
- Publisher: VDM Verlag
- ISBN-10: 3639114507
- ISBN-13: 9783639114508
- Format: 15.2 x 22.9 x 0.7 cm, softcover
- Language: English English
Recently, a variety of physical and chemical methods have been used to synthesize and obtain 1- dimensional semiconductor nanostructures. For the cause of easier nanostructure formation and device applications, we begin this study with the investigation in growth mechanism and well- controlled condition to synthesize 1-dimensional ZnO nanowires. For the low dimensional structure of nanowire, the manipulation of individual nanowire has become an unsettled and crucial issue. Therefore, we use a printing method to realize the nanowire alignment in broad classes. In addition, our investigators would explore the correlation between the quality of 1- dimensional material and electronic transport properties of ZnO nanowire-based transistors. In the fabrication of nanowire transistors, the existing common method of dielectrophoresis (DEP) process would impose a contact problem, and an additional or subsequent metallization is necessary for the electronic connection. Therefore, we will develop a novel method to simultaneously obtain aligned nanowire arrays and device pattering by combining DEP and imprinting processes.
Reviews