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- Publisher: IntechOpen
- ISBN-10: 1789234166
- ISBN-13: 9781789234169
- Format: 17 x 24.4 x 1.1 cm, hardcover
- Language: English
- SAVE -10% with code: EXTRA
Design, Simulation and Construction of Field Effect Transistors (e-book) (used book) | bookbook.eu
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Description
In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
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- Publisher: IntechOpen
- ISBN-10: 1789234166
- ISBN-13: 9781789234169
- Format: 17 x 24.4 x 1.1 cm, hardcover
- Language: English English
In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Reviews