- We will send in 10–14 business days.
/images/books/13172604/9783639052329.jpg)
- Author: Birgit Ryningen
- Publisher: VDM Verlag
- ISBN-10: 3639052323
- ISBN-13: 9783639052329
- Format: 15.2 x 22.9 x 0.7 cm, minkšti viršeliai
- Language: English
- SAVE -10% with code: EXTRA
Reviews
Description
The photovoltaic industry has grown fast the recent years, but the price per watt has not jet reached grid parity. A further increase in solar cell efficiency is therefore needed. It is suggested in this work that the main quality problem in multicrystalline silicon wafers is the existence of dislocation clusters covering large wafer areas. Dislocation formation mechanisms such as punch-out from precipitates with a thermal expansion coefficient different from that of the silicon matrix, intergranular - and intragranular hardening and development of strain fields due to differences in the elasticity module between different grains are reviewed. For dislocations nucleated by an angular grain boundary a multiplication and growth mechanism is proposed where dislocations can cross slip and line up at certain crystallographic directions during crystal growth. This work would be of interest for anybody wanting to have an introduction to dislocation theory relevant for solar cell silicon, or anybody being interested in improving solar cell efficiency.
EXTRA 10 % discount with code: EXTRA
The promotion ends in 22d.22:08:39
The discount code is valid when purchasing from 10 €. Discounts do not stack.
- Author: Birgit Ryningen
- Publisher: VDM Verlag
- ISBN-10: 3639052323
- ISBN-13: 9783639052329
- Format: 15.2 x 22.9 x 0.7 cm, minkšti viršeliai
- Language: English English
The photovoltaic industry has grown fast the recent years, but the price per watt has not jet reached grid parity. A further increase in solar cell efficiency is therefore needed. It is suggested in this work that the main quality problem in multicrystalline silicon wafers is the existence of dislocation clusters covering large wafer areas. Dislocation formation mechanisms such as punch-out from precipitates with a thermal expansion coefficient different from that of the silicon matrix, intergranular - and intragranular hardening and development of strain fields due to differences in the elasticity module between different grains are reviewed. For dislocations nucleated by an angular grain boundary a multiplication and growth mechanism is proposed where dislocations can cross slip and line up at certain crystallographic directions during crystal growth. This work would be of interest for anybody wanting to have an introduction to dislocation theory relevant for solar cell silicon, or anybody being interested in improving solar cell efficiency.
Reviews