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- Author: Oana Moldovan
- Publisher: VDM Verlag
- ISBN-10: 3639148827
- ISBN-13: 9783639148824
- Format: 15.2 x 22.9 x 0.9 cm, minkšti viršeliai
- Language: English
- SAVE -10% with code: EXTRA
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Description
Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators. We also show the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs.
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- Author: Oana Moldovan
- Publisher: VDM Verlag
- ISBN-10: 3639148827
- ISBN-13: 9783639148824
- Format: 15.2 x 22.9 x 0.9 cm, minkšti viršeliai
- Language: English English
Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators. We also show the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs.
Reviews