Cathodoluminescence of Irradiated Hafnium Dioxide (e-book) (used book) | bookbook.eu

Description

The purpose of this research is to understand the effect of radiation on HfO2 thin films, and to compare the quality of HfO₂ thin films produced by both atomic layer deposition (ALD) and pulsed laser deposition (PLD); PLD samples had varying substrate temperatures during deposition (300°C, 500°C, and 750°C). The entirety of this research was conducted using cathodoluminescence (CL) as the examination method. The excitation source was a Kimball Physics EMG-12 electron gun. The photomultiplier tube contained a gallium arsenide photocathode. Measurements were made with beam energies ranging from 1 to 10 keV and beam currents ranging from 30 to 50 μA, both at room temperature and at 7K. The experimentally-determined band gap of HfO2 was consistent with published data, but many other features found in the literature were not present in the CL data obtained. HfO₂ appeared to be radiation hard up to the levels of radiation to which it was exposed. A higher substrate temperature during deposition for PLD samples produced a better material than lower temperatures. ALD produced a more consistent thickness but PLD ultimately produced a better quality material with respect to the spectrum obtained.