426,68 €
474,09 €
-10% with code: EXTRA
Atomic Layer Deposition 2e
Atomic Layer Deposition 2e
426,68
474,09 €
  • We will send in 10–14 business days.
Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides,…
  • Publisher:
  • ISBN-10: 1118062779
  • ISBN-13: 9781118062777
  • Format: 15.5 x 23.6 x 2.3 cm, hardcover
  • Language: English
  • SAVE -10% with code: EXTRA

Atomic Layer Deposition 2e (e-book) (used book) | Cameron | bookbook.eu

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Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.

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  • Author: Cameron
  • Publisher:
  • ISBN-10: 1118062779
  • ISBN-13: 9781118062777
  • Format: 15.5 x 23.6 x 2.3 cm, hardcover
  • Language: English English

Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.

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